Silicon remains the dominant material for commercial photovoltaic and semiconductor devices, owing to its abundance, stability, and mature fabrication technology.
OghmaNano’s simulation engine can accurately model crystalline, polycrystalline, and amorphous silicon devices — from research-scale prototypes to large-area commercial cells.
Key features for Si device simulation
- Full drift–diffusion carrier transport with temperature-dependent mobility and carrier lifetime models.
- Optical modelling including ray tracing and transfer matrix methods for anti-reflection coatings, textured surfaces, and passivation layers.
- Advanced recombination physics: Shockley–Read–Hall, Auger, and radiative recombination with doping- and injection-level dependence.
Example applications
- Solar Cells: Predict I–V curves under STC or variable spectra; explore the impact of doping, layer thickness, and front/back surface fields.
- Photodiodes: Analyse quantum efficiency, dark current, and transient response for high-speed detection.
Why simulate with OghmaNano?
- Optimise device structures before fabrication.
- Quantify performance trade-offs between efficiency, cost, and reliability.
- Investigate degradation mechanisms over time using physics-based models calibrated for silicon.
