Explore the rich physics of Gallium Arsenide (GaAs) devices using OghmaNano’s full 1D, 2D, and 3D drift–diffusion engine.
With its high electron mobility and direct bandgap, GaAs is a cornerstone material for high-speed electronics, lasers, and advanced photovoltaics.
Our GaAs examples are designed to highlight how spatial effects, defects, and doping profiles shape device performance — and why 3D simulation often reveals insights missed in simpler models.
🚀 What You Can Do
- Simulate realistic GaAs p–n junctions: Model devices with realistic doping (e.g., ±1×1024 m−3) and mobilities (μn ≈ 0.8 m2/V·s, μp ≈ 0.04 m2/V·s), and study forward/reverse bias characteristics.
- Visualize local defects in 3D: Add a trap-rich or shunted region and see how current paths bend or bypass the defect, with full spatial recombination mapping.
- Analyze ohmic conduction: Model uniform and graded doping in GaAs resistors, and observe electric field gradients and voltage drop in 3D.
- Investigate gate control: Build GaAs MOS capacitor structures to explore surface potential, accumulation, depletion, and inversion effects.
- Extract key parameters: From JV curves, band diagrams, and recombination heatmaps, determine how mobility, doping, and trap levels affect device performance.
🧪 Example Simulations Included
- 3D GaAs Defect Diode: A p–n junction with a central recombination defect — see how it distorts current flow and reduces performance.
- High-Doped GaAs Diode: Explore realistic forward and reverse bias operation, including depletion width and built-in potential analysis.
- GaAs Doped Resistor: Demonstrates ohmic conduction, field distribution, and the effect of graded doping.
🔧 Perfect for Learning & Research
These GaAs demos are ideal for electronics courses, semiconductor device training, or as a starting point for III–V device research.
All examples can be modified with your own doping profiles, trap states, and contact conditions via the built-in Lua scripting interface.
