Analyse and interpret your transient measurement data with OghmaNano’s fast, physics-based time domain solver. Whether you are performing Transient Photovoltage (TPV), Transient Photocurrent (TPC), or Charge Extraction by Linearly Increasing Voltage (CELIV) experiments, OghmaNano allows you to reproduce experimental conditions with high accuracy and simulate the full device response in under a second.
Time domain simulations are highly sensitive to carrier transport and recombination processes — including Shockley–Read–Hall (SRH) trapping, radiative and Auger recombination, and mobility–lifetime products. By fitting simulations to measured transients, OghmaNano enables precise extraction of physical parameters such as carrier mobility, trap density and energy levels, recombination lifetimes, and RC time constants.
You can customise excitation conditions (pulse length, wavelength, intensity, bias, and repetition rate) to match your experimental setup exactly, and perform temperature-dependent transient sweeps to determine activation energies for trapping and recombination processes. Batch mode allows multiple simulations to run sequentially for different conditions, and results can be exported to standard formats (CSV) for further analysis in MATLAB, Python, or other tools.