OghmaNano
Simulate organic/Perovskite Solar Cells, OFETs, and OLEDs
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Simulate OFETs and Other 2D Structures
A walkthrough of how to simulate OFETs
(with narration)
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OghmaNano features a robust and flexible 2D drift-diffusion model specifically designed for simulating organic field-effect transistors (OFETs) and related thin-film devices. The solver handles both steady-state and transient operation, supports highly anisotropic geometries, and includes full treatment of trapping and charge injection at surfaces.
- Define arbitrary top and bottom contact configurations, including multiple gate electrodes and complex geometries.
- Simulate surface charge accumulation, depletion, and inversion layers under gate control.
- Support for high-voltage simulations: model gate and drain voltages exceeding 200 V without numerical instability.
- Accurately simulate devices with high aspect ratios — e.g., 20 mm channel length with 200 nm gate insulator thickness.
- Include trap states and energetic disorder at semiconductor–dielectric interfaces and in the bulk.
- Extract mobility, contact resistance, and trap density from experimental transfer and output curves.
- Support for both bottom-gate and top-gate architectures, including staggered and coplanar structures.
- Visualise 2D potential maps, charge densities, and current streamlines to gain physical insight into operation and failure modes.
This model is ideal for researchers working on flexible electronics, organic TFTs, and other planar semiconductor systems where traditional 1D approximations fail. Simulate realistic device layouts, including dielectric stacks, fringe fields, and contact engineering.
