Home Examples Screenshots User manual Bluesky logo YouTube
OghmaNano Multiphysics simulation platform for optoelectronic devices and photonic systems DOWNLOAD Quick Start guide

Cs2AgBiBr6 material model

1. Introduction

This page contains the OghmaNano material model for Cs2AgBiBr6 (Cs2AgBiBr6).

Caesium silver bismuth bromide (Cs2AgBiBr6), lead-free cubic double perovskite (indirect-gap absorber)

The model is written in Lua and provides simulation-ready material parameterisations for use within OghmaNano. For documentation, licensing, references, and information about the scope and accuracy of these models, see the material scripting documentation.

2. Lua material model


-- See end of file for copyright, licensing and documentation links.

local material = {}

function material.name()
	local enabled = true

	return "Cs2AgBiBr6", enabled
end


function material.description()
	local enabled = true

	return "Caesium silver bismuth bromide (Cs2AgBiBr6), lead-free cubic double perovskite (indirect-gap absorber)", enabled
end


function material.formula()
	local enabled = true

	return "Cs2AgBiBr6", enabled
end


function material.Eg(state)
	-- Units: eV
	--
	-- Reference:
	-- A. H. Slavney, T. Hu, A. M. Lindenberg, H. I. Karunadasa,
	-- "A Bismuth-Halide Double Perovskite with Long Carrier
	-- Recombination Lifetimes for Photovoltaic Applications",
	-- J. Am. Chem. Soc. 138, 2138-2141, 2016.
	--
	-- INDIRECT gap ~1.95-2.0 eV at 300 K (the lowest direct transition
	-- lies higher). A value of 2.0 eV is used.
	--
	-- Note: the indirect nature limits absorption near the edge and is
	-- one reason single-junction efficiencies are modest despite the
	-- long carrier lifetimes. Constant value; T-dependence not well
	-- characterised.

	local enabled = true
	local value = 2.0

	return value, enabled
end


function material.Xi(state)
	-- Electron affinity
	-- Units: eV
	--
	-- Reference:
	-- Photoemission / band-alignment studies of Cs2AgBiBr6.
	--
	-- Conduction-band minimum ~ -3.9 eV vs vacuum (electron affinity
	-- ~3.9 eV); with Eg ~2.0 eV the valence band is near ~ -5.9 eV.
	-- Reported band positions scatter by several tenths of an eV.
	-- Approximate.

	local enabled = true
	local value = 3.9

	return value, enabled
end


function material.Nc(state)
	-- Effective conduction-band density of states
	-- Units: m^-3
	--
	-- Note: heavier, more localised bands than the lead iodides
	-- (indirect, mixed Ag/Bi character). Order-of-magnitude
	-- placeholder from m* of order ~0.3-0.5 m0.

	local enabled = true
	local T = state.T
	local value = 5.0e24*(T/300.0)^1.5

	return value, enabled
end


function material.Nv(state)
	-- Effective valence-band density of states
	-- Units: m^-3
	--
	-- Note: order-of-magnitude placeholder; see Nc note.

	local enabled = true
	local T = state.T
	local value = 5.0e24*(T/300.0)^1.5

	return value, enabled
end


function material.mu_e(state)
	-- Low-field electron mobility
	-- Units: m^2 V^-1 s^-1
	--
	-- Reference:
	-- Transport studies of Cs2AgBiBr6 single crystals and films.
	--
	-- Mobility is modest (single-crystal ~0.5-12 cm^2/V/s; films
	-- lower). A representative 1 cm^2/V/s = 1e-4 m^2/V/s is used with a
	-- (300/T)^1.5 phonon form. Approximate.

	local enabled = true
	local T = state.T
	local value = 1.0e-4*(300.0/T)^1.5

	return value, enabled
end

function material.mue_x(state)
	return material.mu_e(state)
end

function material.mue_y(state)
	return material.mu_e(state)
end

function material.mue_z(state)
	return material.mu_e(state)
end


function material.mu_h(state)
	-- Low-field hole mobility
	-- Units: m^2 V^-1 s^-1
	--
	-- Note: comparable to or below the electron value; not tightly
	-- constrained. 1 cm^2/V/s = 1e-4 m^2/V/s with (300/T)^1.5.
	-- Approximate.

	local enabled = true
	local T = state.T
	local value = 1.0e-4*(300.0/T)^1.5

	return value, enabled
end

function material.muh_x(state)
	return material.mu_h(state)
end

function material.muh_y(state)
	return material.mu_h(state)
end

function material.muh_z(state)
	return material.mu_h(state)
end


function material.epsilonr(state)
	-- Relative static permittivity
	-- Dimensionless
	--
	-- Reference:
	-- Dielectric studies of Cs2AgBiBr6.
	--
	-- Frequency-dependent: high-frequency epsilon_inf ~4.5-5.5; the
	-- low-frequency (ionic) value is higher, ~30-60. A low-frequency
	-- value ~30 is used for drift-diffusion. Approximate.

	local enabled = true
	local value = 30.0

	return value, enabled
end


function material.free_to_free_recombination(state)
	-- Radiative (band-to-band) recombination coefficient
	-- Units: m^3 s^-1
	--
	-- Note: Cs2AgBiBr6 is an INDIRECT-gap semiconductor, so intrinsic
	-- band-to-band radiative recombination is weak (this is linked to
	-- its long carrier lifetimes). Weak, poorly constrained
	-- placeholder ~1e-18 m^3/s (well below the direct-gap lead
	-- halides). Approximate.

	local enabled = true
	local value = 1.0e-18

	return value, enabled
end


function material.auger_Cn(state)
	-- Electron Auger recombination coefficient
	-- Units: m^6 s^-1
	--
	-- Note: not well characterised. Order-of-magnitude placeholder.

	local enabled = true
	local value = 1.0e-42

	return value, enabled
end


function material.auger_Cp(state)
	-- Hole Auger recombination coefficient
	-- Units: m^6 s^-1
	--
	-- Note: order-of-magnitude placeholder; see Cn note.

	local enabled = true
	local value = 1.0e-42

	return value, enabled
end


function material.ss_srh_trap_energy(state)
	-- SRH trap energy relative to the middle of the band gap.
	-- Units: eV
	--
	-- Positive values are above mid-gap (towards the conduction band).
	-- Negative values are below mid-gap (towards the valence band).

	local enabled = true
	local value = 0.0

	return value, enabled
end


function material.ss_srh_Nt(state)
	-- SRH trap density
	-- Units: m^-3
	--
	-- Note: often the dominant recombination channel in this indirect
	-- absorber. Quality-dependent placeholder; set from measured
	-- lifetime.

	local enabled = true
	local value = 1.0e21

	return value, enabled
end


function material.ss_srh_sigma_n(state)
	-- Electron capture cross section
	-- Units: m^2

	local enabled = true
	local value = 1.0e-19

	return value, enabled
end


function material.ss_srh_sigma_p(state)
	-- Hole capture cross section
	-- Units: m^2

	local enabled = true
	local value = 1.0e-19

	return value, enabled
end


function material.thermal_conductivity(state)
	-- Thermal conductivity
	-- Units: W m^-1 K^-1
	--
	-- Note: ultralow, like other halide perovskites, ~0.3-0.5 W/m/K
	-- (strong anharmonicity). A value of 0.4 W/m/K is used.
	-- Approximate.

	local enabled = true
	local value = 0.4

	return value, enabled
end


function material.heat_capacity(state)
	-- Specific heat capacity
	-- Units: J kg^-1 K^-1
	--
	-- Note: ~300 J/kg/K used as a representative placeholder (limited
	-- calorimetric data). Approximate.

	local enabled = true
	local value = 300.0

	return value, enabled
end


function material.density(state)
	-- Mass density
	-- Units: kg m^-3
	--
	-- Reference:
	-- A. H. Slavney et al., J. Am. Chem. Soc. 138, 2138, 2016
	-- (structure). Cs2AgBiBr6 rho ~ 4.6 g/cm^3.

	local enabled = true
	local value = 4600.0

	return value, enabled
end


function material.lattice_constant(state)
	-- Cubic lattice constant
	-- Units: m
	--
	-- Reference:
	-- A. H. Slavney et al., J. Am. Chem. Soc. 138, 2138, 2016.
	--
	-- Cs2AgBiBr6 IS cubic (double-perovskite / elpasolite, Fm-3m) at
	-- room temperature, so this is a genuine cubic lattice constant:
	-- a = 11.25 A at 300 K. The large cell reflects the rock-salt
	-- ordering of Ag and Bi on the B-sites (doubled perovskite cell).

	local enabled = true
	local value = 11.25e-10

	return value, enabled
end


function material.print()
	local state = {
		T = 300.0,
		x = 0.0,
		y = 0.0,
		z = 0.0,
		photon_density = 0.0,
	}

	print(string.format("Material:               %s", material.name()))
	print(string.format("Description:            %s", material.description()))
	print(string.format("Formula:                %s", material.formula()))
	print(string.format("Temperature:            %.2f K", state.T))
	print(string.format("Position:               %.6e, %.6e, %.6e m", state.x, state.y, state.z))
	print(string.format("Photon density:         %.6e m^-3", state.photon_density))

	print(string.format("Band gap:               %.6f eV", material.Eg(state)))
	print(string.format("Electron affinity:      %.6f eV", material.Xi(state)))
	print(string.format("Electron mobility:      %.6e m^2/V/s", material.mu_e(state)))
	print(string.format("Hole mobility:          %.6e m^2/V/s", material.mu_h(state)))
	print(string.format("Nc:                     %.6e m^-3", material.Nc(state)))
	print(string.format("Nv:                     %.6e m^-3", material.Nv(state)))
	print(string.format("Relative permittivity:  %.6f", material.epsilonr(state)))

	print(string.format("Radiative coeff.:       %.6e m^3/s", material.free_to_free_recombination(state)))
	print(string.format("Electron Auger coeff.:  %.6e m^6/s", material.auger_Cn(state)))
	print(string.format("Hole Auger coeff.:      %.6e m^6/s", material.auger_Cp(state)))

	print(string.format("SRH trap energy:        %.6f eV", material.ss_srh_trap_energy(state)))
	print(string.format("SRH trap density:       %.6e m^-3", material.ss_srh_Nt(state)))
	print(string.format("SRH sigma n:            %.6e m^2", material.ss_srh_sigma_n(state)))
	print(string.format("SRH sigma p:            %.6e m^2", material.ss_srh_sigma_p(state)))

	print(string.format("Thermal conductivity:   %.6e W/m/K", material.thermal_conductivity(state)))
	print(string.format("Heat capacity:          %.6e J/kg/K", material.heat_capacity(state)))
	print(string.format("Mass density:           %.6e kg/m^3", material.density(state)))
end

return material

-- ============================================================================
-- Copyright (C) 2026 The OghmaNano Project
-- All rights reserved.
--
-- This file is part of the OghmaNano Materials Model Library.
--
-- Website:
-- https://www.oghma-nano.com
--
-- Documentation and accuracy statement:
-- https://www.oghma-nano.com/manual/material-scripts.html
--
-- These material models are provided to support scientific research and
-- semiconductor device simulation. If you find them useful, please cite
-- OghmaNano where appropriate. Please do not redistribute these files or
-- incorporate them into other software or databases without permission.
-- ============================================================================