Absorption, stimulated emission and optical gain
Learning objectives. After reading this page you should be able to:
- Write the Fermi–Dirac occupation and the quasi-Fermi-level idea.
- Set up the 2D k-space integral with its \(k\,dk/2\pi\) weighting.
- Relate sheet carrier density to the quasi-Fermi levels.
- Combine occupation, matrix elements and Lorentzian broadening into gain.
- Distinguish stimulated gain, absorption and net gain, and TE/TM spectra.
Prerequisites. The optical-transitions page and the wavefunctions page.
Estimated reading time. 35 minutes.
Optical gain is what makes a quantum well amplify light: it occurs when stimulated emission exceeds absorption, which requires a population inversion between the conduction and valence subbands. This page assembles the OghmaNano gain calculation from its physical ingredients — carrier statistics, the two-dimensional density of states, the optical matrix elements and lineshape broadening — and states clearly what the current implementation does and does not include.
1. Occupation and quasi-Fermi levels
Under optical or electrical pumping the electrons and holes are each internally thermalised but not in equilibrium with one another, so each carrier type has its own quasi-Fermi level. The occupation of a state at energy \(E\) is the Fermi–Dirac function
\[ f(E) = \frac{1}{1 + \exp\!\big((E - E_F)/k_B T\big)}, \]
with \(E_F=E_{F,c}\) for the conduction states and \(E_F=E_{F,v}\) for the valence states. The two quasi-Fermi levels move apart as pumping increases; population inversion, and hence gain, requires their separation to exceed the transition energy.
2. Sheet density and the 2D integral
Because motion is free in the plane, each subband is a two-dimensional band and its carrier density is an integral over the in-plane wavevector. The two-dimensional density of states gives the integration weight \(k\,dk/2\pi\) per spin/degeneracy, so the electron sheet density is
\[ n_{2D} = \sum_{n} g\!\int \frac{k\,dk}{2\pi}\; f\!\big(E_n(k)\big), \]
with \(g\) the state degeneracy and the sum running over subbands. OghmaNano evaluates this integral numerically over the computed dispersion. Given a target sheet density it finds the quasi-Fermi level by bisection — adjusting \(E_F\) until the integral matches the target — and does the same for holes with \(1-f\). In the full-spectrum mode, where electron- and hole-like states are mixed, the S-character weight of each state scales its contribution.
3. Bringing in the matrix elements
Each transition contributes in proportion to its optical matrix element \(M^2\), the squared overlap-and-character factor computed from the envelopes. The absolute scale is carried by a prefactor built from the Kane energy and the optical constants,
\[ \text{prefactor} \propto \frac{\pi\,q^2\,p^2}{n_r\,c\,\varepsilon_0\,m_0^2\,\omega\,W}, \qquad p^2 = \tfrac{1}{2} m_0 E_p q, \]
where \(n_r\) is the refractive index, \(W\) the well width, \(\omega\) the optical angular frequency and \(E_p\) the Kane energy. The \(1/W\) converts the sheet response to a bulk-like gain coefficient (units of inverse length).
4. Lineshape broadening
Real transitions are broadened by scattering into a lineshape rather than a sharp delta function. OghmaNano uses a Lorentzian of half-width \(\gamma\),
\[ L(E - \hbar\omega) = \frac{1}{\pi}\,\frac{\gamma}{(E - \hbar\omega)^2 + \gamma^2}, \]
centred on each transition energy \(E = E_e(k) - E_v(k)\). This spreads each transition over a range of photon energies and smooths the spectrum.
5. Stimulated gain, absorption and net gain
For a given photon energy \(\hbar\omega\), each transition contributes to stimulated emission with probability \(f_c(1-f_v)\) (electron present in the upper state, hole in the lower) and to absorption with probability \(f_v(1-f_c)\). Summing over subbands and over the 2D integral,
\[ \begin{aligned} g_{\text{stim}}(\hbar\omega) &= C\!\sum \int \frac{k\,dk}{2\pi}\; M^2\, f_c(1-f_v)\, L, \\ \alpha(\hbar\omega) &= C\!\sum \int \frac{k\,dk}{2\pi}\; M^2\, f_v(1-f_c)\, L, \end{aligned} \]
where \(C\) is the prefactor. The net gain is their difference,
\[ g_{\text{net}}(\hbar\omega) = g_{\text{stim}}(\hbar\omega) - \alpha(\hbar\omega). \]
Net gain is positive only where the population is inverted — where \(f_c > f_v\) — which is the Bernard–Duraffourg condition that the quasi-Fermi separation exceed the photon energy. Below threshold the same expression is negative, correctly describing absorption.
6. TE / TM spectra and density sweep
For the wurtzite model OghmaNano runs the gain integral twice, once with the TE matrix elements (basal, \(P_2\)) and once with the TM matrix elements (c-axis, \(P_1\)), producing separate TE and TM spectra whose ratio reflects the valence orbital character of the uppermost states. The whole calculation is repeated over a sweep of sheet densities, so the output is a family of spectra showing how gain builds up with pumping; a rough volume density \(n_{3D}\approx n_{2D}/W\) is reported for comparison with bulk values.
Implementation note. The current gain routine computes stimulated gain and absorption (and their difference) from the occupation factors, matrix elements and Lorentzian lineshape described above. It does not compute a separate spontaneous-emission spectrum. Temperature, refractive index and the broadening \(\gamma\) are fixed parameters of the calculation, and the sheet-to-volume conversion \(n_{3D}\approx n_{2D}/W\) is an approximation used only for reporting a comparable bulk density.
Key points
- Electrons and holes have separate quasi-Fermi levels found by matching the target sheet density.
- The 2D integral carries a \(k\,dk/2\pi\) weight from the two-dimensional density of states.
- Gain combines the matrix element, the occupation factors \(f_c(1-f_v)\)/\(f_v(1-f_c)\) and a Lorentzian.
- Net gain = stimulated gain − absorption; wurtzite yields separate TE and TM spectra.