IMPS Simulation Tutorial
1. Introduction
IMPS (Intensity-Modulated Photocurrent Spectroscopy) measures how a device’s photocurrent responds to a small sinusoidal modulation of the incident light. Sweeping frequency yields a complex transfer function whose magnitude and phase carry information about carrier transport, recombination, and interfacial processes. With OghmaNano you can simulate IMPS directly on your device model to generate Nyquist and Bode plots that mirror experiment.
2. Getting started
Open the New simulation window (see Figure 1a) and double-click the IS/IMPS/IMVS/CV category to browse frequency-domain examples (see Figure 1b). Load an IMPS template to get a ready-to-run project with sensible defaults.


3. Configure & run IMPS


Open the Frequency domain experiment window and set your frequency mesh (??). For IMPS, use Excite with: Light and Measure: Current (short-circuit by default). Choose a modulation depth that keeps you in the small-signal regime. When ready, click Run simulation.



4. Inspecting the outputs
IMPS produces a Nyquist plot (Imag vs Real photocurrent) and Bode plots vs frequency (e.g. Real/Imag and Phase). The Nyquist locus often forms an arc; its characteristic frequency is linked to recombination/transport times. The phase plot helps separate capacitive storage from kinetic limits.



💡 Tasks: Probe sensitivity with these tweaks (start small; then try ×10 changes):
- Shift the frequency mesh lower/higher to expose slow traps or fast transport.
- Reduce the light modulation depth to stay in small-signal (linear) regime.
- Alter recombination or interfacial parameters and watch the Nyquist arc shift in size/position.
- Compare IMPS on devices with different transport layers to see which bottleneck dominates.
✅ Expected results
- A clear Nyquist arc; the apex frequency tracks a dominant recombination/transport time constant.
- Lower recombination rate → arc moves to lower frequencies; magnitude may increase.
- Stronger capacitive effects → larger phase lag and broader low-frequency features.
- Mesh extending to lower f reveals slow processes; higher f highlights fast transport limits.