Chapter 8: Silicon & III-V semiconductor devices

This chapter covers the simulation of silicon and III-V semiconductor devices in OghmaNano using drift-diffusion device models. The tutorials include silicon and GaAs PN junction diodes, crystalline and amorphous silicon solar cells, MOS structures, and multidimensional semiconductor simulations. Examples explore charge-carrier transport, electrostatics, recombination, doping, defects, and current-voltage characteristics in practical semiconductor device structures.

• 8.0 Introduction to semiconductor device modelling
  • 8.0.1 Silicon and semiconductor device simulation
• 8.1 Silicon device tutorials
  • 8.1.1 Silicon PN Junction Diode (1D): Drift–Diffusion (Dark I–V, SRH Recombination)
  • 8.1.2 Polycrystalline Silicon Solar Cell (1D): Industrial n+/p/p+ (Al-BSF-class)
  • 8.1.3 Amorphous Silicon (a-Si:H) Solar Cell (1D): Thin-Film p/i/n (Defect-limited)
  • 8.1.4 Si 2D NMOS Capacitor Tutorial: Electrostatics and Depletion
• 8.2 III–V Semiconductor Devices (GaAs, AlGaAs, InGaAs/InP)
  • 8.2.1 GaAs PN Junction Diode (1D): Drift–Diffusion (Dark I–V, SRH Recombination)
  • 8.2.2 GaAs 3D Drift–Diffusion with a Vertical Defect
  • 8.2.3 GaAs/AlGaAs Heterojunction Solar Cell: Drift–Diffusion and Optical Modelling
  • 8.2.4 InGaAs/InP PIN Photodiode at 1550 nm: Optical Generation, Drift–Diffusion and Responsivity
  • 8.2.5 GaAs/AlGaAs Infrared LED at 870 nm: Carrier Injection, Radiative Recombination and Light Emission