Chapter 3: Core physics modules
- 📐 3.1 Drift-diffusion
-
3.1.1 Theory of drift–diffusion modelling
-
3.1.2 Electrostatics
-
3.1.3 Charge carrier density
-
3.1.4 The drift–diffusion equations
-
3.1.5 Interfaces
-
3.1.6 Charge carrier mobility
-
3.1.7 Calculating the built-in potential
-
3.1.8 Numerics
-
3.1.9 Drift–diffusion derivation from the BTE, including hydrodynamic equations
-
3.1.10 The Einstein relations
-
- ⚡ 3.2 Recombination and trapping
- 📷 3.3 Optics
- ⚡ 3.4 Excited states and ions.
- 🌡️ 3.5 Thermal models
- 🔷 3.6 Quantum wells and band-structure theory
-
3.5.1 Quantum wells and confinement
-
3.5.2 Parabolic bands and the effective-mass approximation
-
3.5.3 Eigenstates, normalisation and state character
-
3.5.4 Introduction to k·p perturbation theory
-
3.5.5 Basis states, envelope functions and multiband Hamiltonians
-
3.5.6 The 8-band zincblende k·p model
-
3.5.7 The 10-band zincblende / dilute-nitride model
-
3.5.8 The 8-band wurtzite k·p model
-
3.5.9 Pseudomorphic epitaxy and strain tensors
-
3.5.10 The Bir–Pikus strain Hamiltonian
-
3.5.11 The six-valley silicon conduction-band model
-
3.5.12 The six-band Luttinger–Kohn valence model
-
3.5.13 Material parameters and where they enter the solvers
-
3.5.14 Choosing a quantum-well model
-
- 🔷 3.7 Carrier scattering and optical transitions