Chapter 3: Core physics modules

• 📐 3.1 Drift-diffusion
  • 3.1.1 Theory of drift–diffusion modelling
  • 3.1.2 Recombination
  • 3.1.3 The need for traps
  • 3.1.4 Interfaces
  • 3.1.5 Charge carrier mobility
  • 3.1.6 Calculating the built in potential
  • 3.1.7 Numerics
  • 3.1.8 BTE Drift diffusion derivation including hydrodynamic equations
• ⚡ 3.2 Recombination and trapping
  • 3.2.1 Free-to-free recombination
  • 3.2.2 The need for trap states
  • 3.2.3 Shockley–Read–Hall (SRH) recombination
  • 3.2.4 Numerical SRH trapping and recombination
  • 3.2.5 Langevin recombination
  • 3.2.6 Auger recombination
  • 3.2.7 Derivation of the SRH recombination equation
• 📷 3.3 Optics
  • 3.2.1 Transfer Matrix Model (TMM)
  • 3.2.2 Optical mode solver (1D / 2D)
  • 3.2.3 Ray tracing model
  • 3.2.4 Lasers (fs)
  • 3.2.5 S-plane editor
• ⚡ 3.4 Excited states and ions.
  • 3.3.1 Excited states in OLEDs
  • 3.3.2 Excited states in OPVs
  • 3.3.3 Perovskite ions
• 🌡️ 3.5 Thermal models
  • 3.4.1 Thermal models
• 🔷 3.6 Quantum wells and band-structure theory
  • 3.5.1 Quantum wells and confinement
  • 3.5.2 Parabolic bands and the effective-mass approximation
  • 3.5.3 Eigenstates, normalisation and state character
  • 3.5.4 Introduction to k·p perturbation theory
  • 3.5.5 Basis states, envelope functions and multiband Hamiltonians
  • 3.5.6 The 8-band zincblende k·p model
  • 3.5.7 The 10-band zincblende / dilute-nitride model
  • 3.5.8 The 8-band wurtzite k·p model
  • 3.5.9 Pseudomorphic epitaxy and strain tensors
  • 3.5.10 The Bir–Pikus strain Hamiltonian
  • 3.5.11 The six-valley silicon conduction-band model
  • 3.5.12 The six-band Luttinger–Kohn valence model
  • 3.5.13 Material parameters and where they enter the solvers
  • 3.5.14 Choosing a quantum-well model
• 🔷 3.7 Carrier scattering and optical transitions
  • 3.6.1 Optical transitions and matrix elements
  • 3.6.2 Absorption, spontaneous emission and optical gain
  • 3.6.3 Fröhlich (LO phonon) scattering
  • 3.6.4 Scattering, relaxation times and mobility